transistors 1 publication date: february 2003 sjc00178ced 2SC5346 silicon npn epitaxial planar type for low-frequency high breakdown voltage amplification complementary to 2sa1982 features ? satisfactory linearity of forward current transfer ratio h fe ? high collector-emitter voltage (base open) v ceo ? small collector output capacitance (common base, input open cir- cuited) c ob absolute maximum ratings t a = 25 c parameter symbol rating unit collector-base voltage (emitter open) v cbo 150 v collector-emitter voltage (base open) v ceo 150 v emitter-base voltage (collector open) v ebo 5v collector current i c 50 ma peak collector current i cp 100 ma collector power dissipation * p c 1w junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-emitter voltage (base open) v ceo i c = 0.1 ma, i b = 0 150 v emitter-base voltage (collector open) v ebo i e = 10 a, i c = 05v collector-base cutoff current (emitter open) i cbo v cb = 100 v, i e = 01 a forward current transfer ratio * h fe v ce = 5 v, i c = 10 ma 130 330 ? collector-emitter saturation voltage v ce(sat) i c = 30 ma, i b = 3 ma 1 v transition frequency f t v cb = 10 v, i e = ? 10 ma, f = 200 mhz 160 mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 5 pf (common base, input open circuited) noise voltage nv v ce = 10 v, i c = 1 ma, g v = 80 db 150 300 mv r g = 100 k ? , function = flat electrical characteristics t a = 25 c 3 c unit: mm note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification rank r s h fe 130 220 185 330 1: emitter 2: collector 3: base mt-2-a1 package 6.9 0.1 2.5 0.1 0.45 1.05 0.05 2.5 0.5 123 2.5 0.5 +0.10 ?0.05 0.45 +0.10 ?0.05 (0.8) (0.5) (1.0) (1.0) 4.5 0.1 14.5 0.5 4.0 0.7 0.65 max. (0.2) note) * : copper plate at the collector is more than 1 cm 2 in area, 1.7 mm in thickness
2SC5346 2 sjc00178ced h fe ? i c c ob ? v cb p c ? t a i c ? v ce v ce(sat) ? i c 0 160 40 120 80 0 1.2 1.0 0.8 0.6 0.4 0.2 copper plate at the collector is more than 1 cm 2 in area, 1.7 mm in thickness collector power dissipation p c ( w ) ambient temperature t a ( c ) 012 48 210 6 0 180 120 90 150 60 30 t a = 25 c i b = 10 ma 9 ma 8 ma 7 ma 6 ma 5 ma 4 ma 3 ma 2 ma 1 ma collector current i c ( ma ) collector-emitter voltage v ce ( v ) 1 10 100 1 000 0.001 0.01 0.1 1 10 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 1 10 100 1 000 0 300 250 200 150 100 50 v ce = 5 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma ) 1 10 100 0 6 5 4 3 2 1 f = 1 mhz i e = 0 t a = 25 c collector-base voltage v cb ( v ) collector output capacitance (common base, input open circuited) c ob (pf)
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